Beijing University Unveils Silicon-Free Transistor with 40% Performance Boost

Researchers at Beijing University have developed a silicon-free transistor that promises to significantly increase processor computing power while reducing energy consumption. The team, led by Hailin Peng, a chemistry professor at PKU, published their findings in Nature on February 13th. They claim the new transistor can be integrated into chips with the potential to outperform current silicon-based processors by 40% while consuming 10% less energy. This advancement stems from the unique architecture of the chip, specifically the two-dimensional silicon-free transistor, a gate-all-around field-effect transistor (GAAFET). Unlike FinFET transistors, GAAFETs have gates on all four sides, offering better electrostatic control and faster switching times. The Beijing team utilized a bismuth oxyselenide semiconductor to create a 2D "anatomically thin" transistor. These 2D bismuth transistors are more flexible than traditional silicon ones and offer better carrier mobility and a high dielectric constant, further boosting efficiency. If integrated into chips, this transistor could allow China to circumvent restrictions on advanced chip acquisitions by transitioning to a different production process.